symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol device typ max units n-ch 360 415 c/w n-ch 400 460 c/w r jl n-ch 300 350 c/w p-ch 360 415 c/w p-ch 400 460 c/w r jl p-ch 300 350 c/w thermal characteristics: n-channel and p-channel -55 to 150 -55 to 150 maximum junction-to-lead c steady-state parameter maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a 20 -20 8 drain-source voltage 8 gate-source voltage absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel w 0.9 0.7 5 0.3 0.19 -0.48 -0.6 0.3 0.19 a continuous drain current a t a =25c i d t a =70c pulsed drain current b r ja maximum junction-to-ambient a steady-state -3 t a =70c power dissipation t a =25c p d steady-state junction and storage temperature range maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s AO7600 features n-channel p-channel v ds (v) = 20v -20v i d = 0.9a (v gs =4.5v) -0.6a (v gs =-4.5v) r ds(on) r ds(on) < 300m ? (v gs =4.5v) < 550m ? (v gs =-4.5v) < 350m ? (v gs =2.5v) < 700m ? (v gs =-2.5v) < 450m ? (v gs =1.8v) < 950m ? (v gs =-1.8v) the AO7600 uses advanced trench technology mosfets to provide excellen t r ds(on) and low gate charge. the complementary mosfets may be used to form a level shifted high side switch, an inverter, and for a host of other applications. both devices are esd protected. standard product AO7600 is pb-free (meets rohs & sony 259 specifications). AO7600l is a green product ordering option. AO7600 and a o7600l are electrically identical. n-channel p -channel sc-70-6 (sot-323) top view s2 d2 g2 d1 g1 s1 d1 s1 g d2 s2 g complementary enhancement mode field effect transistor general description www.freescale.net.cn 1 / 7
symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 25 a v gs(th) 0.5 0.75 0.9 v i d(on) 5a 181 300 t j =125c 253 330 237 350 m ? 317 450 m ? g fs 2.6 s v sd 0.69 1 v i s 0.4 a c iss 101 120 pf c oss 17 pf c rss 14 pf r g 34 ? q g 1.57 1.9 nc q gs 0.13 nc q gd 0.36 nc t d(on) 3.2 ns t r 4ns t d(off) 15.5 ns t f 2.4 ns t rr 6.7 8.1 ns q rr 1.6 nc v ds =5v, i d =0.8a v gs =4.5v, i d =0.9a forward transconductance output capacitance reverse transfer capacitance input capacitance v gs =0v, v ds =10v, f=1mhz diode forward voltage i s =0.5a,v gs =0v maximum body-diode continuous current dynamic parameters turn-on delaytime turn-on rise time gate resistance v gs =0v, v ds =0v, f=1mhz v gs =4.5v, v ds =10v, i d =0.8a switching parameters m ? v gs =2.5v, i d =0.75a v gs =1.8v, i d =0.7a r ds(on) static drain-source on-resistance gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v a gate-body leakage current v ds =0v, v gs =8v drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =16v, v gs =0v n-channel: electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters body diode reverse recovery charge total gate charge i f =0.8a, di/dt=100a/ s turn-off delaytime turn-off fall time body diode reverse recovery time i f =0.8a, di/dt=100a/ s v gs =5v, v ds =10v, r l =12.5 ? , r gen =6 ? gate source charge gate drain charge a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 3 : july 2005 AO7600 complementary enhancement mode field effect transistor www.freescale.net.cn 2 / 7
n-channel: typical electrical and thermal characteristic s 0 2 4 6 8 10 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 3v 2.5v 8v 4v 3.5v 5v 10v 0 1 2 3 4 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v ds =5v 160 200 240 280 320 360 400 440 480 01234 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =1.8v v gs =2.5v v gs =4.5v 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.4 0.8 1.2 1.6 2.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =1.8v v gs =4.5v v gs =2.5v i 07a 140 180 220 260 300 340 380 420 460 500 12345678 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =0.9a 25c 125c i d =0.9a i d =0.75a AO7600 complementary enhancement mode field effect transistor www.freescale.net.cn 3 / 7
n-channel: typical electrical and thermal characteristic s 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 50 100 150 200 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c r ss 0 4 8 12 16 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.0 0.1 1.0 10.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1 s 1 0s d c r ds(on) limited t j(max) =150c, t a =25c 10 s v ds =10v i d =0.9a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =415c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c t o n t p d t o n p d AO7600 complementary enhancement mode field effect transistor www.freescale.net.cn 4 / 7
symbol min typ max units bv dss -20 v -1 t j =55c -5 i gss 10 a v gs(th) -0.5 -0.6 -0.9 v i d(on) -3 a 415 550 t j =125c 542 700 590 700 m ? 700 950 m ? g fs 1.7 s v sd -0.86 -1 v i s -0.4 a c iss 114 140 pf c oss 17 pf c rss 14 pf r g 12 17 ? q g 1.44 1.8 nc q gs 0.14 nc q gd 0.35 nc t d(on) 6.5 ns t r 6.5 ns t d(off) 18.2 ns t f 5.5 ns t rr 10 13 ns q rr 3nc p-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =-250 a, v gs =0v i dss zero gate voltage drain current v ds =-16v, v gs =0v a gate-body leakage current v ds =0v, v gs =8v m ? v gs =-2.5v, i d =-0.5a gate threshold voltage v ds =v gs i d =-250 a on state drain current v gs =-4.5v, v ds =-5v static drain-source on-resistance v gs =-1.8v, i d =-0.4a v gs =-4.5v, i d =-0.6a r ds(on) forward transconductance v ds =-5v, i d =-0.6a input capacitance diode forward voltage i s =-0.5a,v gs =0v maximum body-diode continuous current dynamic parameters v gs =0v, v ds =-10v, f=1mhz output capacitance reverse transfer capacitance total gate charge gate source charge gate drain charge gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters v gs =-4.5v, v ds =-10v, i d =-0.6a turn-on delaytime v gs =-4.5v, v ds =-10v, r l =16.7 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-0.6a, di/dt=100a/ s body diode reverse recovery charge i f =-0.6a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 3 : july 2005 AO7600 complementary enhancement mode field effect transistor www.freescale.net.cn 5 / 7
p-channel: typical electrical and thermal characteristic s 0 2 4 6 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) -3.5v v gs =-2.0v -3v -6v -10v -4.5v 0 1 2 3 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -v gs (volts) figure 2: transfer characteristics -i d (a) 300 400 500 600 700 800 900 01234 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 0.0 0.4 0.8 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-4.5v v gs =-1.8v i d =-0.5a i d =-0.4a 300 400 500 600 700 800 900 0246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-1.8v v gs =-4.5v i d =-0.6a 25c 125c i d =-0.6a -4v v gs =-2.5v v gs =-2.5v -2.5v AO7600 complementary enhancement mode field effect transistor www.freescale.net.cn 6 / 7
p-channel: typical electrical and thermal characteristic s 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 50 100 150 200 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 2 4 6 8 10 12 14 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.00 0.01 0.10 1.00 10.00 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1 s 1 0s d c r ds(on) limited t j ( max ) =150c, t a =25c v ds =-10v i d =-0.6a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =415c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s t o n t p d t o n p d AO7600 complementary enhancement mode field effect transistor www.freescale.net.cn 7 / 7
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